mtd: vf610_nfc: use in-band bad block table
Use in-band bad block table (NAND_BBT_NO_OOB) which allows to
use the full OOB for hardare ECC purposes. Since there is no
ECC correction on the OOB it is also safer to use in-band area
to store the bad block table marker.
Signed-off-by: Stefan Agner <stefan@agner.ch>
diff --git a/drivers/mtd/nand/vf610_nfc.c b/drivers/mtd/nand/vf610_nfc.c
index 5d72b4a..05cbdf3 100644
--- a/drivers/mtd/nand/vf610_nfc.c
+++ b/drivers/mtd/nand/vf610_nfc.c
@@ -155,29 +155,6 @@
#define mtd_to_nfc(_mtd) \
(struct vf610_nfc *)((struct nand_chip *)_mtd->priv)->priv
-static u8 bbt_pattern[] = {'B', 'b', 't', '0' };
-static u8 mirror_pattern[] = {'1', 't', 'b', 'B' };
-
-static struct nand_bbt_descr bbt_main_descr = {
- .options = NAND_BBT_LASTBLOCK | NAND_BBT_CREATE | NAND_BBT_WRITE |
- NAND_BBT_2BIT | NAND_BBT_VERSION,
- .offs = 11,
- .len = 4,
- .veroffs = 15,
- .maxblocks = 4,
- .pattern = bbt_pattern,
-};
-
-static struct nand_bbt_descr bbt_mirror_descr = {
- .options = NAND_BBT_LASTBLOCK | NAND_BBT_CREATE | NAND_BBT_WRITE |
- NAND_BBT_2BIT | NAND_BBT_VERSION,
- .offs = 11,
- .len = 4,
- .veroffs = 15,
- .maxblocks = 4,
- .pattern = mirror_pattern,
-};
-
static struct nand_ecclayout vf610_nfc_ecc45 = {
.eccbytes = 45,
.eccpos = {19, 20, 21, 22, 23,
@@ -624,10 +601,8 @@
/* Bad block options. */
if (cfg.flash_bbt)
- chip->bbt_options = NAND_BBT_USE_FLASH | NAND_BBT_CREATE;
-
- chip->bbt_td = &bbt_main_descr;
- chip->bbt_md = &bbt_mirror_descr;
+ chip->bbt_options = NAND_BBT_USE_FLASH | NAND_BBT_NO_OOB |
+ NAND_BBT_CREATE;
/* Set configuration register. */
vf610_nfc_clear(mtd, NFC_FLASH_CONFIG, CONFIG_ADDR_AUTO_INCR_BIT);